Enhancement of the nucleation of smooth
and dense nanocrystalline diamond films by using molybdenum seed layers
J. G. Buijnsters, L.
Vázquez, G.
W. G. van Dreumel, J. J. ter Meulen, W. J. P. van Enckevort,
and J. P. Celis
Abstract:
A method for the nucleation enhancement of nanocrystalline diamond
(NCD)
films
on silicon substrates at low temperature is discussed. A
sputter deposition of a Mo seed layer with thickness 50 nm on Si
substrates was
applied followed by an ultrasonic seeding step with nanosized
detonation
diamond powders. Hot-filament chemical vapor deposition (HF-CVD)
was
used to nucleate and grow NCD
films on substrates heated up at 550 °C. The nucleation of diamond
and the early
stages of NCD film formation were investigated at different methane
percentages
in methane / hydrogen gas mixtures by atomic force microscopy,
micro-Raman
spectroscopy, scanning electron microscopy, and grazing incidence x-ray
analyses in order to gain specific insight in the nucleation process of
NCD
films. The nucleation kinetics of diamond on the Mo-coated Si
substrates was
found to be up to ten times higher than on blank Si substrates. The
enhancement
of the nucleation of diamond on thin Mo interlayers results from two
effects,
namely, (a)
the
nanometer rough Mo surface shows an improved embedding of
ultrasonically introduced nanosized diamond seeds that act as starting
points
for the diamond nucleation during HF-CVD and (b)
the
rapid
carbonization of the Mo surface causes the formation of Mo2C
onto
which diamond easily nucleates. The diamond nucleation density
progressively
increases at increasing methane percentages and is about 5 x1010
cm−2 at 4.0% methane. The improved nucleation kinetics of
diamond on
Mo interlayers facilitates the rapid formation of NCD films possessing
a very
low surface roughness down to ~6 nm,
and allows a submicron thickness control.