Generic
nano-imprint process for fabrication of nanowire arrays
Aurélie Pierret, Moïra
Hocevar, Silke L Diedenhofen, Rienk E Algra, E Vlieg, Eugene C
Timmering, Marc A Verschuuren, George W G Immink, Marcel A Verheijen
and Erik P A M Bakkers
Nanotechnology 21 issue 6 (2010)
065305
Abstract:
A generic process has been developed
to grow nearly defect-free arrays of (heterostructured) InP and GaP
nanowires. Soft nano-imprint lithography has been used to pattern gold
particle arrays on full 2 inch substrates. After lift-off organic
residues remain on the surface, which induce the growth of additional
undesired nanowires. We show that cleaning of the samples before growth
with piranha solution in combination with a thermal anneal at 550
°C for InP and 700 °C for GaP results in uniform nanowire
arrays with 1% variation in nanowire length, and without undesired
extra nanowires. Our chemical cleaning procedure is applicable to other
lithographic techniques such as e-beam lithography, and therefore
represents a generic process.