G.W.G.
van Dreumel, J.G. Buijnsters, T. Bohnen, J.J. ter Meulen, P.R. Hageman,
W.J.P. van Enckevort, E. Vlieg,
Growth
of GaN on nano-crystalline diamond substrates,
Diam. & Rel. Mat. 18 (2009)
1043-1047
Abstract:
In this study GaN has been grown on
nano-crystalline diamond substrates utilizing metal-organic chemical
vapour deposition (MOCVD). It is shown that the growth of closed GaN
films onto synthetic diamond substrates is feasible, when applying the
correct buffer layer and growth parameters. XRD measurements showed
that the GaN formed is of wurzite structure and polycrystalline, but
the high intensity of the (0002) diffraction peak indicates a
preferential crystallite orientation. This preferred 100011 orientation
was confirmed by SEM analysis. The optical quality of the deposited GaN
layer was investigated using cathodoluminescence and showed a large
yellow luminescence peak. This work comprises a first step in preparing
heterogeneous layers and GaN devices with a diamond heat sink as a
substrate, facilitating the thermal management of these devices.