Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography
Verheijen, Marcel A., Algra, Rienk E., Borgstrom, Magnus T., Immink, George, Sourty, Erwan, van Enckevort, Willem J. P., Vlieg, Elias, Bakkers, Erik P. A. M.
NANO LETTERS 7 (10): 3051-3055 OCT 2007

Abstract: We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.