Three-dimensional
morphology of GaP-GaAs nanowires revealed by transmission electron
microscopy tomography
Verheijen, Marcel A., Algra, Rienk E., Borgstrom, Magnus T., Immink,
George, Sourty, Erwan, van Enckevort, Willem J. P., Vlieg, Elias,
Bakkers, Erik P. A. M.
NANO LETTERS 7 (10): 3051-3055 OCT 2007
Abstract: We have investigated
the morphology of heterostructured GaP-GaAs nanowires grown by
metal-organic vapor-phase epitaxy as a function of growth temperature
and V/III precursor ratio. The study of heterostructured nanowires with
transmission electron microscopy tomography allowed the
three-dimensional morphology to be resolved, and discrimination between
the effect of axial (core) and radial (shell) growth on the morphology.
A temperature- and precursor-dependent structure diagram for the GaP
nanowire core morphology and the evolution of the different types of
side facets during GaAs and GaP shell growth were constituted.