Abstract:
The defect structure of homoepitaxial diamond films grown by hot filament assisted chemical vapour deposition has been studied by spectroscopy. As substrates natural diamond plates of varying orientations were used. The growth experiments were carried out for several methane-hydrogen gas phase compositions at different temperatures. Cathodoluminescence topography and infrared absorption spectroscopy showed that the amount of grown-in boron and hydrogen is maximal for the fastest growing {110} layers and minimal for the slowest growing {100} layers. For several {111} and {100} faces a clear relation between the mutual distance of growth steps and the formation of point defects was observed.